DocumentCode
274535
Title
1.5 μm λ/4 shifted multiple quantum well DFB LDs grown by MOVPE
Author
Sasaki, T. ; Henmi, N. ; Takan, S. ; Yamada, H. ; Kitamura, M. ; Hasumi, H. ; Mito, I.
Author_Institution
Opto-Electron. Res. Labs., NEC Corp., Kawasaki, Japan
fYear
1988
fDate
11-15 Sep 1988
Firstpage
364
Abstract
1.5 μm λ/4 shifted MQW DFB LDs grown by MOVPE have been developed for the first time. Narrow linewidth and low chirp operation under modulation together with effective TM mode suppression have been demonstrated
Keywords
distributed feedback lasers; laser modes; laser transitions; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; spectral line breadth; vapour phase epitaxial growth; 1.5 micron; MOVPE; MQW; effective TM mode suppression; laser diodes; low chirp operation; modulation; multiple quantum well DFB LDs; narrow linewidth;
fLanguage
English
Publisher
iet
Conference_Titel
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location
Brighton
Type
conf
Filename
93596
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