Title :
High performance InGaAsP-InP 1.5 μm DCPBH laser diodes with LP-OMVPE grown bulk and MQW active layers
Author :
Thijs, P.J.A. ; Tiemeyer, L.F. ; Dongen, T.v. ; Kuindersma, P.I. ; Binsma, J.J.M. ; van de Hofstad, G.L. ; Nijman, W.
Author_Institution :
Philips Res. Labs., Eindhoven, Netherlands
Abstract :
DCPBH laser diodes emitting at λ=1.5 μm with bulk and quantum well active layers were fabricated by hybrid low-pressure (LP)-OMVPE/LPE technique. For uncoated devices of 250 μm in length room temperature CW threshold currents of 15 and 20 mA were obtained, respectively. The lasers with bulk active layers show kink-free operation and excellent lifetest performance
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; liquid phase epitaxial growth; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; 1.5 micron; 15 mA; 20 mA; 250 micron; DCPBH laser diodes; III-V semiconductor; InGaAsP-InP; LP-OMVPE grown bulk layers; MQW active layers; high performance; hybrid OMVPE-LPE techniques; kink-free operation; lifetest performance; room temperature CW threshold currents; uncoated devices;
Conference_Titel :
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location :
Brighton
