DocumentCode
274537
Title
High performance InGaAsP-InP 1.5 μm DCPBH laser diodes with LP-OMVPE grown bulk and MQW active layers
Author
Thijs, P.J.A. ; Tiemeyer, L.F. ; Dongen, T.v. ; Kuindersma, P.I. ; Binsma, J.J.M. ; van de Hofstad, G.L. ; Nijman, W.
Author_Institution
Philips Res. Labs., Eindhoven, Netherlands
fYear
1988
fDate
11-15 Sep 1988
Firstpage
372
Abstract
DCPBH laser diodes emitting at λ=1.5 μm with bulk and quantum well active layers were fabricated by hybrid low-pressure (LP)-OMVPE/LPE technique. For uncoated devices of 250 μm in length room temperature CW threshold currents of 15 and 20 mA were obtained, respectively. The lasers with bulk active layers show kink-free operation and excellent lifetest performance
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; liquid phase epitaxial growth; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; 1.5 micron; 15 mA; 20 mA; 250 micron; DCPBH laser diodes; III-V semiconductor; InGaAsP-InP; LP-OMVPE grown bulk layers; MQW active layers; high performance; hybrid OMVPE-LPE techniques; kink-free operation; lifetest performance; room temperature CW threshold currents; uncoated devices;
fLanguage
English
Publisher
iet
Conference_Titel
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location
Brighton
Type
conf
Filename
93598
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