DocumentCode
274550
Title
High speed GaInAs photoconductive-like detectors for long wavelength optical communication
Author
Morita, Tetsuo ; Murata, Michio ; Koike, Ken-Ichi ; Ono, Kimizo
Author_Institution
Optoelectron. Technol. Res. Corp., Yokohama, Japan
fYear
1988
fDate
11-15 Sep 1988
Firstpage
424
Abstract
A very high speed GaInAs photoconductive-like detector has been fabricated by organometallic vapor phase epitaxy. The drift of carriers in this device can be explained by hybrid mode combining photoconductive and pin photodiode mode. The rise and fall time less than 90psec has been achieved with electrode spacing 14μm, and the dark current is approximately 300nA at 1V bias
Keywords
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; optical communication equipment; photoconducting devices; photodetectors; vapour phase epitaxial growth; 1.0 V; 14 micron; 300 nA; 90 ps; GaInAs; III-V semiconductors; carrier drift; dark current; electrode spacing; long wavelength optical communication; organometallic vapor phase epitaxy; photoconductive-like detectors; pin photodiode;
fLanguage
English
Publisher
iet
Conference_Titel
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location
Brighton
Type
conf
Filename
93611
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