DocumentCode
274610
Title
MOCVD growth of III-V heterojunctions and superlattices on Si substrates for photonic devices
Author
Razeghi, M. ; Maurel, P. ; Defour, M. ; Omnes, F. ; Acher, O.
Author_Institution
Thomson-CSF, Orsay, France
fYear
1988
fDate
11-15 Sep 1988
Firstpage
74
Abstract
High-quality bulk GaAs, InP and double heterostructure InP/GaInAsP (1.3 μm)/InP have been grown successfully on silicon substrates using low pressure metalorganic chemical vapor deposition (LP-MOCVD) growth technique. Structural characterization such as X-ray diffraction indicates high-quality epilayers. From photoluminescence measurements the authors deduce that InP and GaxIn1-xAsy P1-y epilayers have good optical properties. That is of great importance for various device applications. Various devices such as GaInAsP/InP light emitting diodes, λ=1.3 μm lasers, InGaAs/InP multiquantum well waveguides, and InGaAs/InP p-i-n photodetectors have been produced for the first time
Keywords
III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; luminescence of inorganic solids; optical waveguides; photodetectors; photodiodes; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; semiconductor superlattices; vapour phase epitaxial growth; 1.3 micron; GaInAsP-InP; GaInAsP/InP light emitting diodes; III-V heterojunctions; InGaAs-InP; InGaAs/InP multiquantum well waveguides; InGaAs/InP p-i-n photodetectors; InP; InP-GaInAsP-InP; LP-MOCVD; MOCVD growth; Si substrates; X-ray diffraction; bulk GaAs; high-quality epilayers; lasers; optical properties; photoluminescence; photonic devices; structural characterisation; superlattices;
fLanguage
English
Publisher
iet
Conference_Titel
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location
Brighton
Type
conf
Filename
93672
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