Title :
Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells
Author :
Fu, L. ; Lu, H.F. ; Mokkapati, S. ; Jolley, G. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
We demonstrate that plasmonic light trapping effect can be used to improve all the main device characteristics of self-assembled InGaAs/GaAs quantum dot solar cell. The underlying physical processes of carrier occupation, transportation, and recombination within the plasmonic quantum dot solar cells will be discussed.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; plasmonics; self-assembly; semiconductor quantum dots; solar cells; InGaAs-GaAs; InGaAs/GaAs quantum dot solar cells; carrier occupation; physical processes; plasmonic light trapping; plasmonic quantum dot solar cells; recombination; self-assembled quantum dot solar cell; transportation; Charge carrier processes; Gallium arsenide; Nanoparticles; Photovoltaic cells; Physics; Plasmons; Quantum dots;
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
DOI :
10.1109/PHO.2011.6110590
