• DocumentCode
    2748907
  • Title

    Monolithically grown InxGa1−xAs nanowire array on silicon tandem solar cells with high efficiency

  • Author

    Shin, Jae Cheol ; Kim, Kyou Hyun ; Hu, Hefei ; Yu, Ki Jun ; Rogers, John A. ; Zuo, Jian-Min ; Li, Xiuling

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
  • fYear
    2011
  • fDate
    9-13 Oct. 2011
  • Firstpage
    391
  • Lastpage
    392
  • Abstract
    We demonstrate one-dimensional heteroepitaxy of InxGa1-xAs nanowires in the entire composition range on Si (111) substrate for tandem solar cells with efficiencies that exceed the planar Si single junction cell fabricated using identical processes.
  • Keywords
    III-V semiconductors; elemental semiconductors; epitaxial growth; gallium arsenide; indium compounds; nanowires; semiconductor quantum wires; silicon; solar cells; InxGa1-xAs; Si; Si (111) substrate; monolithically grown nanowire array; one-dimensional heteroepitaxy; planar Si single junction cell; silicon tandem solar cells; Arrays; Indium gallium arsenide; P-n junctions; Photonic band gap; Photovoltaic cells; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (PHO), 2011 IEEE
  • Conference_Location
    Arlington, VA
  • Print_ISBN
    978-1-4244-8940-4
  • Type

    conf

  • DOI
    10.1109/PHO.2011.6110592
  • Filename
    6110592
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2748907