Title :
Flexible ISFET Biosensor Using IGZO Metal Oxide TFTs and an ITO Sensing Layer
Author :
Smith, Joseph T. ; Shah, Sahil S. ; Goryll, Michael ; Stowell, John R. ; Allee, D.R.
Author_Institution :
Flexible Display Center, Arizona State Univ., Tempe, AZ, USA
Abstract :
This letter presents the fabrication details and measured performance of a prototype flexible extended-gate ion-sensitive field effect transistor (ISFET) biosensor, manufactured using a metal oxide indium-gallium-zinc oxide thin film transistor and an indium-tin oxide sensing layer on a 125- μm thick flexible plastic substrate. ISFET drain current was shown to respond correctly to the pH buffer concentration with repeatable pH sensitivity observed over multiple cycles. These results demonstrate the initial viability of directly extending flexible plastic substrate organic light emitting diode display technology to the production of low-cost, plastic ISFET biosensors.
Keywords :
II-VI semiconductors; biosensors; gallium compounds; indium compounds; ion sensitive field effect transistors; light emitting diodes; organic compounds; pH; thin film transistors; tin compounds; wide band gap semiconductors; IGZO metal oxide TFT; ITO; ITO sensing layer; InGaZnO; drain current; flexible ISFET biosensor; flexible plastic substrate; indium-tin oxide sensing layer; metal oxide indium-gallium-zinc oxide thin film transistor; organic light emitting diode display technology; pH buffer concentration; pH sensitivity; plastic ISFET biosensors; prototype flexible extended-gate ion-sensitive field effect transistor biosensor; size 125 mum; Biosensors; Current measurement; Indium tin oxide; Logic gates; Plastics; Thin film transistors; Biosensor; IGZO; ISFET; TFT; flexible electronics;
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2013.2295057
