Title :
Fabry-Perot and vertical cavity surface emitting InAs quantum dot lasers
Author :
Bimberg, D. ; Ledentsov, N.N. ; Grundmann, M. ; Heinrichsdorff, F. ; Ustinov, V.M. ; Kopev, P.S. ; Alferov, Zh.I. ; Lott, J.A.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Abstract :
Quantum dot (QD) edge emitting and vertical cavity lasers are realized using a self-organized growth approach. Threshold current densities at room temperature (RT) of about 60 A/cm2 for edge emitting and 170 A/cm2 for vertical cavity lasers are measured. High internal (>96%) and differential (70%) efficiencies are obtained for InGaAs-AlGaAs lasers based on vertically coupled QDs and RT 1 W continuous wave operation is demonstrated. QD lasers exhibit much larger gain, differential gain and smaller linewidth enhancement factor as compared to conventional quantum well devices
Keywords :
III-V semiconductors; current density; indium compounds; self-assembly; semiconductor lasers; semiconductor quantum dots; surface emitting lasers; 1 W; 293 K; Fabry-Perot laser; InAs; InGaAs-AlGaAs; differential gain; edge emitting lasers; linewidth enhancement factor; self-organized growth; surface emitting quantum dot lasers; threshold current density; Current measurement; Density measurement; Fabry-Perot; Quantum dot lasers; Quantum dots; Quantum well lasers; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711736
