Title :
Epitaxially regrown gaas based photonic crystal surface emitting laser
Author :
Williams, D.M. ; Groom, K.M. ; Stevens, B.J. ; Jiang, Q. ; Childs, D.T.D. ; Taylor, R.J. ; Khamas, S. ; Hogg, R.A. ; Ikeda, N. ; Sugimoto, Y.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
An epitaxial regrowth process is used to realise photonic crystal surface emitting lasers emitting at 980nm. We optimise the growth process for void-free infill and demonstrate laser operation via coupling to photonic crystal bands.
Keywords :
III-V semiconductors; epitaxial growth; gallium arsenide; laser beams; photonic crystals; surface emitting lasers; epitaxially regrown; laser operation; photonic crystal bands; photonic crystal surface emitting laser; void free infill; wavelength 980 nm; Couplings; Epitaxial growth; Gallium arsenide; Gratings; Lattices; Photonic crystals; Surface emitting lasers;
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
DOI :
10.1109/PHO.2011.6110745
