• DocumentCode
    2752050
  • Title

    The effects of ionizing radiation on SAW resonators

  • Author

    Hines, J.H. ; Stapor, W.J.

  • Author_Institution
    US Naval Res. Lab., Washington, DC, USA
  • fYear
    1990
  • fDate
    4-7 Dec 1990
  • Firstpage
    471
  • Abstract
    SAW resonators with frequencies ranging from 199 MHz to 746 MHz were fabricated and exposed to sequentially increasing total doses of various types of ionizing radiation, and the effects were observed. The substrates used were air-swept and as-grown (nonswept) 40° Y-rotated quartz, LST-quartz, and nonswept 40° Y-rotated quartz coated with a 400-Å-thick layer of SiOx. The total doses used range from 1 kRad(Si) to 10 MRad(Si), and the radiation types tested were Co-60 gamma, high energy electron (β), proton, and heavy ion (Si-28, Cl-35, Ge-74, and Au-197) radiation. The measurement results show a distinct difference in the radiation sensitivity of SAW device performance parameters based on the substrate used. The effects of the passivating SiOx layer were also interesting, since the coated devices exhibited significantly smaller radiation-induced changes than those without the coating
  • Keywords
    crystal resonators; electron beam effects; gamma-ray effects; ion beam effects; proton effects; surface acoustic wave devices; 103 to 107 rad; 199 to 746 MHz; LST-quartz; SAW resonators; SiO2; Y-rotated quartz; electron irradiation; gamma irradiation; heavy ion irradiation; ionizing radiation; passivating SiOx layer; proton irradiation; radiation sensitivity; Coatings; Electrons; Ionizing radiation; Laboratories; Material properties; Resonant frequency; Surface acoustic wave devices; Surface acoustic waves; Testing; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 1990. Proceedings., IEEE 1990
  • Conference_Location
    Honolulu, HI
  • Type

    conf

  • DOI
    10.1109/ULTSYM.1990.171410
  • Filename
    171410