• DocumentCode
    2752084
  • Title

    Low redundancy overhead multibit error correction in memory

  • Author

    Zhu, Ming ; Xiao, Liyi ; Sun, Zheng ; Zhang, Yanjing ; Jiang, Yuqian ; Li, Shuhao

  • Author_Institution
    Microelectron. Center, Harbin Inst. of Technol., Harbin, China
  • fYear
    2010
  • fDate
    July 28 2010-Aug. 1 2010
  • Firstpage
    365
  • Lastpage
    368
  • Abstract
    As technology scales, memories have become more susceptible to radiation induced multiple bit upsets (MBUs). Multibit error correction codes (MECC) are an effective approach to mitigate MBUs in memories. This paper proposes a new codeword structure to protect memory against MBUs. Euclidean Geometry Low Density Parity Check (EG-LDPC) codes and Hamming codes are combined in the proposed codeword to assure the reliability of memory with low redundancy overhead. Furthermore, the proposed codeword can protect some longer data which is difficult for other MECCs to deal with. By using the proposed codeword, both low redundancy overhead scheme and long data width scheme for multibit error correction are presented. Finally, the proposed schemes have been implemented in Verilog and validated through a wide set of simulations. The experiment results reveal that the proposed method has a superior protection level. Compared with general MECC, it has lower redundancy and performance overheads.
  • Keywords
    Hamming codes; error correction codes; integrated memory circuits; redundancy; Euclidean geometry low density parity check codes; Hamming codes; Verilog; codeword structure; long data width scheme; low redundancy overhead multibit error correction; memory reliability; multibit error correction codes; multiple bit upsets; Computer architecture; Decoding; Error correction codes; Layout; Parity check codes; Redundancy; Memory; Multibit Error Correction Codes; Multiple Bit Upsets;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Laser Physics and Laser Technologies (RCSLPLT) and 2010 Academic Symposium on Optoelectronics Technology (ASOT), 2010 10th Russian-Chinese Symposium on
  • Conference_Location
    Harbin
  • Print_ISBN
    978-1-4244-5511-9
  • Type

    conf

  • DOI
    10.1109/RCSLPLT.2010.5615316
  • Filename
    5615316