• DocumentCode
    275306
  • Title

    Improving GTO thyristor reliability by use of linear MOSFET amplifiers and controlled avalanching in gate drive circuits

  • Author

    Johnson, C.M. ; Palmer, P.R.

  • Author_Institution
    Cambridge Univ., UK
  • fYear
    1990
  • fDate
    17-19 Jul 1990
  • Firstpage
    417
  • Lastpage
    423
  • Abstract
    The controlled linear amplifier described has been shown to provide safe and reliable gate turn-off waveforms which may be easily adapted to the circuit conditions. The low impedance coaxial gate connections enhance the performance of the circuit and allow a greater degree of control than is possible using standard wired arrangements. For large GTOs, where the turn-off current may be in excess of 3000 A, both the coaxial connections and a controlled turn-off circuit are desirable for reliable operation. Device reliability and uniform turn-off over the whole silicon area can be ensured by use of gains lower than those typically specified in manufacturers data sheets. With turn-off gains of less than one, true snubberless performance is possible with no risk to the device
  • Keywords
    differential amplifiers; driver circuits; field effect transistor circuits; reliability; thyristors; GTO thyristor reliability; controlled avalanching; gate drive circuits; gate turn-off waveforms; linear MOSFET amplifiers; low impedance coaxial gate connections enhance; snubberless performance;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Power Electronics and Variable-Speed Drives, 1991., Fourth International Conference on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    114679