Title :
High performance 850nm VCSELs with surface relief
Author :
Li, T. ; Hao, E.J.
Author_Institution :
Nat. Key Lab. on High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China
fDate :
July 28 2010-Aug. 1 2010
Abstract :
High performance 850nm VCSEL with surface-relief are fabricated. The maximum power of 10mW was achieved at injection current of 19mA for the device with 12μm oxide aperture. The electrical characteristics of the devices are investigated. In the meanwhile, a novel and extremely simple process for the oxide-confined VCSEL fabrication was described.
Keywords :
laser modes; optical fabrication; surface emitting lasers; VCSEL; current 19 mA; electrical characteristics; fabrication process; high order mode suppression; power 10 mW; surface relief; wavelength 850 nm; Apertures; Fabrication; Surface resistance; Surface treatment; Vertical cavity surface emitting lasers; 850nm; VCSELs; oxide-confined; surface-relief;
Conference_Titel :
Laser Physics and Laser Technologies (RCSLPLT) and 2010 Academic Symposium on Optoelectronics Technology (ASOT), 2010 10th Russian-Chinese Symposium on
Conference_Location :
Harbin
Print_ISBN :
978-1-4244-5511-9
DOI :
10.1109/RCSLPLT.2010.5615392
