Title :
In-situ annealing of GaInNAs at high temperatures
Author :
Kondow, Masaliiko ; Kitatani, Takeshi ; Tanaka, Toshiaki
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
Summary form only given. We have found that the optimum annealing temperature depends on the crystallinity of as-grown GaInNAs, and that robust GaInNAs grown by solid source-MBE can survive at 600 C during a considerably long annealing process. Therefore, this type of GalnNAs is applicable to actual device fabrication
Keywords :
annealing; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical films; semiconductor thin films; 600 C; GaInNAs; as-grown GaInNAs; crystallinity; device fabrication; high temperatures; in-situ annealing; long annealing process; optimum annealing temperature; robust GaInNAs; solid source-MBE; Annealing; Cleaning; Crystallization; Crystals; Diode lasers; Epitaxial growth; Fabrication; Molecular beam epitaxial growth; Nitrogen; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.893966
