DocumentCode :
2759849
Title :
Application-specific selection of 6T SRAM cells offering superior performance and quality with a triple-threshold-voltage CMOS technology
Author :
Zhu, Hong ; Kursun, Volkan
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
fYear :
2011
fDate :
19-20 July 2011
Firstpage :
68
Lastpage :
73
Abstract :
Conventional six-transistor (6T) memory cell has an intrinsic data stability problem due to directly-accessed storage nodes during a read operation. The data stability issue becomes more severe with increasing variability and decreasing supply voltage in scaled CMOS technologies. Conventional techniques to enhance the data stability of 6T memory cells tend to sacrifice other important figures of merit, such as memory integration density and write ability. 6T SRAM circuits with higher data stability are presented in this paper. An electrical performance metric is evaluated to compare various memory design options targeting different applications. The overall electrical quality is enhanced without increasing the area with a multi-threshold-voltage CMOS technology. A high-threshold-voltage 6T memory cell is recommended for portable devices where lower energy consumption and longer battery lifetime are critically important. Alternatively, a triple-threshold-voltage 6T SRAM cell is recommended for robust memory operation in applications with aggressive speed requirement.
Keywords :
CMOS integrated circuits; SRAM chips; SRAM cells; application-specific selection; battery lifetime; directly-accessed storage nodes; electrical performance metric; electrical quality; energy consumption; intrinsic data stability problem; memory design; memory integration density; multithreshold voltage CMOS technology; portable device; robust memory operation; scaled CMOS technology; six-transistor memory cell; supply voltage; triple-threshold-voltage CMOS technology; write ability; Arrays; CMOS integrated circuits; CMOS technology; Circuit stability; Power demand; Random access memory; Transistors; Multi-threshold; battery lifetime; data stability; energy efficiency; leakage power; memory integration density; operation speed; write margin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ASQED), 2011 3rd Asia Symposium on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4577-0145-0
Type :
conf
DOI :
10.1109/ASQED.2011.6111704
Filename :
6111704
Link To Document :
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