Computational analysis of mechanical and electromigration reliability problems

Author

Avci, I. ; Balasingam, P. ; Chawla, V. ; El-Sayed, K. ; Johnson, M.D. ; Kucherov, A. ; Li, S. ; Mishra, B. ; Oh, Y. ; Polsky, B. ; Qin, Z. ; Simeonov, S. ; Tian, S. ; Xu, X. ; Zhou, W. ; Zhu, M.

Author_Institution

Synopsys Inc., Mountain View, CA, USA

fYear

2012

fDate

4-6 June 2012

Firstpage

1

Lastpage

3

Abstract

The reliability of complex interconnect structures at all levels of the chip integration hierarchy has become a major concern due to the use of fine feature sizes, diverse materials, and complex 3D architectures. Reliability issues range from stress related failures such as dielectric cracking and interface debonding during manufacturing to electrical and mechanical failures such as electromigration and void formation during operation. This paper summarizes computational results obtained using a unified physics-based 3D simulation framework.

Keywords

electromigration; failure analysis; integrated circuit interconnections; integrated circuit reliability; three-dimensional integrated circuits; chip integration hierarchy; complex 3D architectures; computational analysis; dielectric cracking; diverse materials; electrical failures; electromigration reliability problems; interconnect structures; interface debonding; mechanical failures; mechanical reliability problems; stress related failures; unified physics-based 3D simulation framework; void formation; Electromigration; Materials; Mathematical model; Metals; Reliability; Strain; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2012 IEEE International

Conference_Location

San Jose, CA

ISSN

pending

Print_ISBN

978-1-4673-1138-0

Electronic_ISBN

pending

Type

conf

DOI

10.1109/IITC.2012.6251575

Filename

6251575