DocumentCode :
2760236
Title :
Random work functions induced DC and dynamic characteristic fluctuations in 16-nm high-κ/metal gate CMOS device and digital circuit
Author :
Cheng, Hui-Wen ; Li, Yiming
Author_Institution :
Inst. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2011
fDate :
19-20 July 2011
Firstpage :
203
Lastpage :
206
Abstract :
We study nanosized metal grains induced DC and timing fluctuations in 16 nm high-κ/metal gate (HKMG) MOSFET devices. A localized work function fluctuation (LWKF) on device´s DC/AC and CMOS inverter´s characteristics is advanced using an experimentally validated 3D device simulation which cannot be well modeled using an averaged WKF (AWKF) method. DC characteristics estimated by the LWKF method are 1.5 and 1.6 times larger than that by the AWKF method for N- and P-MOSFETs, respectively, due to random grain number and position effects. The delay time of high-to-low and low-to-high of the CMOS inverter calculated by the AWKF method are underestimated by 1.29 and 1.19 times, compared with the LWKF method.
Keywords :
CMOS integrated circuits; MOSFET; digital circuits; high-k dielectric thin films; invertors; N-MOSFET; P-MOSFET; averaged WKF method; delay time; device DC-AC characteristics; digital circuit; high-κ-metal gate CMOS device; inverter characteristics; localized work function fluctuation; localized work function fluctuation method; position effects; random grain number; random work functions induced DC fluctuations; size 16 nm; CMOS integrated circuits; Fluctuations; Integrated circuit modeling; Logic gates; MOSFET circuits; Tin; 16-nm-gate MOSFET; Localized work function fluctuation method; average work function fluctuation method; grain orientation; high-κ/ metal gate; nanosized metal grain; three-dimensional device simulation; threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ASQED), 2011 3rd Asia Symposium on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4577-0145-0
Type :
conf
DOI :
10.1109/ASQED.2011.6111745
Filename :
6111745
Link To Document :
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