Alignment tolerant InP/Si CMOS hybrid integrated photoreceivers operating at 0.9 Gbps

Author

Vrazel, Michael ; Chang, Jae J. ; Brooke, Martin ; Jokerst, Nan M. ; Dagnall, Georgienna ; Brown, April

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

2

fYear

2000

fDate

2000

Firstpage

884

Abstract

Hybrid integration and alignment tolerant optoelectronic (OE) components are steps toward the realization of low cost, pervasive OE implementation. We report the integration of a thin film large area integrated-MSM onto a differential Si CMOS receiver circuit. This integrated receiver demonstrated operation at 0.9 Gbps and highly alignment tolerant operation at 650 Mbps. Measured alignment tolerance of the receiver corresponded well to the performance predicted by theory

Keywords

CMOS analogue integrated circuits; chip-on-board packaging; current-mode circuits; hybrid integrated circuits; indium compounds; integrated circuit packaging; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; photodetectors; silicon; 0.9 Gbit/s; CMOS hybrid integrated photoreceivers; COB; InP; Si; alignment tolerant operation; alignment tolerant optoelectronic components; current mode input; differential CMOS receiver circuit; high responsivity; hybrid OEIC; thin film large area inverted-MSM; Circuit testing; Costs; Gallium arsenide; Indium phosphide; Large Hadron Collider; Optical fibers; Optical receivers; Photodetectors; Semiconductor device packaging; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.894138

Filename

894138