Title :
Comparative study on ALD/CVD-Co(W) films as a single barrier/liner layer for 22−1x nm generation interconnects
Author :
Shimizu, Hideharu ; Wojcik, Henry ; Shima, Kohei ; Kobayashi, Yoshihiko ; Momose, Takeshi ; Bartha, Johann W. ; Shimogaki, Yukihiro
Author_Institution :
Taiyo Nippon Sanso Corp., Tokyo, Japan
Abstract :
ALD-Co(W) was found to have a potential to replace the conventional PVD-Ta/TaN bi-layer in further shrinking interconnects as a single-layered barrier/liner material. We could confirm good barrier property of CVD/ALD-Co(W) film by BTS-TVS method after 350°C annealing. ALD-Co(W) showed lower resistivity of 60 μΩ-cm and good adhesion to Cu. Complete trench filling with Co(W) followed by Cu seed deposition was demonstrated. These properties were confirmed to be derived from W stuffing into grain boundaries of oxygen-free ALD-Co(W) films. We would like to suggest ALD-Co(W) as a next-generation barrier/liner layer for future development.
Keywords :
annealing; copper; grain boundaries; isolation technology; metallisation; tantalum compounds; ALD-CVD-Co(W) films; BTS-TVS method; Cu; PVD; Ta-TaN; adhesion; generation interconnects; grain boundaries; resistance 60 muohm; resistivity; single barrier-liner layer; temperature 350 degC; trench filling; Adhesives; Annealing; Conductivity; Films; Grain boundaries; Impurities;
Conference_Titel :
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1138-0
Electronic_ISBN :
pending
DOI :
10.1109/IITC.2012.6251657
