DocumentCode :
2761661
Title :
Driving down CIGS cost of ownership with high volume thermal deposition systems
Author :
Patrin, John ; Conroy, Chad ; Wen, Jian-gang ; Brown, Doup ; Pfeiffer, Ken ; Fobare, David ; Novak, Jennifer ; Amadon, Jeff ; Metacarpa, Dave
Author_Institution :
Veeco Instrum. Inc., St. Paul, MN, USA
fYear :
2010
fDate :
20-25 June 2010
Abstract :
One of the biggest challenges for high volume copper indium gallium (di)Selenide (CIGS) manufacturing is transitioning the R&D/pilot processes to a low cost high volume manufacturing process. The most important parameters in lowering the manufacturing cost of ownership (CoO) are module efficiency, low materials cost, high throughput and low capital expenditures. Veeco has developed a CIGS thermal deposition system that incorporates a multi-zone deposition system that enables process optimization for high module efficiency and high throughput. Further manufacturing cost reductions have been achieved by incorporating an innovative linear thermal deposition source for copper (Cu), indium (In), gallium (Ga) and selenium (Se). The linear source dramatically increases material utilization while reducing process complexity. Veeco´s CIGS deposition system can deposit the complete CIGS absorber layer in one system compared to other processes that require two to three systems. A CoO analysis will be provided that quantifies the CIGS system manufacturing productivity.
Keywords :
III-V semiconductors; copper compounds; cost reduction; elemental semiconductors; gallium arsenide; indium compounds; semiconductor device manufacture; solar cells; vapour deposition; CIGS cost of ownership; high volume copper indium gallium selenide manufacturing; high volume thermal deposition systems; low capital expenditures; material utilization; multizone deposition system; process complexity reduction; process optimization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5615824
Filename :
5615824
Link To Document :
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