CMOS devices and circuits for microwave and millimeter wave applications

Author

Zirath, H. ; Ferndahl, M. ; Motlagh, B.M. ; Masud, A. ; Angelov, I. ; Vickes, H.-O.

Author_Institution

Chalmers Univ. of Technol., Goteborg

fYear

2006

fDate

12-15 Dec. 2006

Firstpage

1140

Lastpage

1143

Abstract

Recent results on characterization, modelling and circuit design based on 90/130 nm CMOS is presented in this paper. Amplifiers, frequency multipliers, and mixers were realized for frequencies up to 60 GHz. Circuit results based on two different transmission line approaches are reported. Load-pull characterization of transistors at 9 GHz and 23 GHz are also reported with 250mW/mm and 150 mW/mm output power for a 90 nm and 130 nm CMOS technology respectively. Initial studies of FINFETs promise feasibility of analogue circuits up to millimetre wave frequencies.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; MMIC mixers; MOSFET; field effect MIMIC; frequency multipliers; integrated circuit design; integrated circuit modelling; CMOS circuit; FINFET; analogue circuit design; circuit modelling; frequency 23 GHz; frequency 9 GHz; frequency multipliers; linear amplifiers; load-pull characterization; microwave wave application; millimeter wave application; mixers; size 130 nm; size 90 nm; transmission line; CMOS technology; Circuit synthesis; Frequency; Microwave circuits; Microwave devices; Millimeter wave circuits; Millimeter wave devices; Millimeter wave technology; Millimeter wave transistors; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. APMC 2006. Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-4-902339-08-6

Electronic_ISBN

978-4-902339-11-6

Type

conf

DOI

10.1109/APMC.2006.4429609

Filename

4429609