Title :
Device modeling of a micromorph tandem solar cell using AMPS-1D
Author :
Huang, J.Y. ; Hsu, C.W. ; Shieh, Jia-Min ; Yu, Peichen
Author_Institution :
Dept. of Photonics & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
This work first theoretically optimize the amorphous (a-Si:H) and the microcrystalline (μc-Si:H) devices characteristics, and then perform studies for micromorph tandem solar cells. The studies calculated by AMPS-1D show that the TCO work function has obvious influence on the open-circuit voltage. Moreover, the power conversion efficiency of an a-Si:H cell is optimized by changing the absorber´s layer thickness and mobility gap. Furthermore, a critical doping concentration of μc-Si:H films limiting the barrier height of a grain boundary (GB) is observed. After optimizing sub cell mutually, we combine the individual junctions to construct a micromorph cell which has an efficiency of 9.24%.
Keywords :
amorphous semiconductors; doping profiles; grain boundaries; silicon; solar cells; AMPS-1D; Si:H; TCO work function; absorber layer thickness; amorphous device characteristics; doping concentration; grain boundary; microcrystalline device characteristics; micromorph tandem solar cell; mobility gap; open-circuit voltage; power conversion efficiency;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5890-5
DOI :
10.1109/PVSC.2010.5615842