Title :
A novel ultra low-leakage switch for switched capacitor circuits
Author :
Abhari, Mahdi Ahangarian ; Abrishamifar, Adib
Author_Institution :
Electr. Eng. Dept., Iran Univ. of Sci. & Technol. (IUST), Tehran, Iran
Abstract :
The voltage drop rate in switched capacitor circuits is typically limited by OFF state of switch. Past low-leakage switch designs have assumed that subthreshold conduction and drain-to-bulk diode leakage dominate over other leakage sources. However, recent researches revealed a third important mechanism, accumulation-mode source-drain coupling, which can contribute significant leakage. This paper presents a novel switch, which minimizes the overall effect of these three leakage sources. Therefore, it is proper for high-accuracy switched-capacitor circuit applications. This switch has been simulated in 0.35-μm CMOS technology. At 3.3-V power supply, 22.07-pW total power consumption and 337-aA maximum leakage current were obtained.
Keywords :
CMOS integrated circuits; capacitor switching; field effect transistor switches; CMOS technology; MOS transistor; accumulation-mode source-drain coupling; drain-to-bulk diode leakage; size 0.35 mum; switched capacitor circuits; ultralow-leakage switch; voltage 3.3 V; voltage drop rate; Leakage current; Regulators; Semiconductor device modeling; Switches; Switching circuits; Transistors; Voltage control; Accumulation-mode source-drain coupling; Drain-to-Bulk Diode; Leakage Current; Low-Leakage Switch; Subthreshold Conduction; Switched Capacitor Circuit;
Conference_Titel :
GCC Conference & Exhibition, 2009 5th IEEE
Conference_Location :
Kuwait City
Print_ISBN :
978-1-4244-3885-3
DOI :
10.1109/IEEEGCC.2009.5734238
