Title :
Discontinuous Innovation: Strained Silicon Technology
Author_Institution :
Syst. & Technol. Group, IBM, Hopewell Junction, NY
Abstract :
Strained silicon technology has had a dramatic impact on extending the limits of semiconductor technology. Due to the difficulties of both bipolar and CMOS scaling, strained layer technology offers a manufacturability approach to change the material properties of silicon and significantly enhance performance
Keywords :
bipolar transistors; elemental semiconductors; field effect devices; semiconductor technology; silicon; CMOS scaling; Si; bipolar scaling; material properties; semiconductor technology; strained layer technology; strained silicon technology; BiCMOS integrated circuits; CMOS technology; Capacitive sensors; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Materials science and technology; Silicon germanium; Technological innovation; Temperature;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246569
