Title :
Strained Pt Schottky Diodes on n-type Si and Ge
Author :
Liao, M.H. ; Chang, S.T. ; Kuo, Paulina S. ; Wu, H.T. ; Peng, Chu-Yun ; Liu, C.W.
Author_Institution :
Dept. of Electr. Eng., National Taiwan Univ., Taipei
Abstract :
In summary, the reduction of the Schottky-barrier height for the n-type semiconductor under external mechanical strain is observed. This reduction is shown to originate from the reduction of conduction band edge. The boundary condition under uniaxial strain technology is stress-free along the direction perpendicular to uniaxial stress obtain the reasonable agreement between data and theoretical calculation
Keywords :
Schottky barriers; Schottky diodes; elemental semiconductors; germanium; platinum; silicon; stress effects; Ge; Schottky diodes; Schottky-barrier height; Si; conduction band edge; external mechanical strain; n-type semiconductors; uniaxial strain technology; uniaxial stress; Capacitance-voltage characteristics; Capacitive sensors; Mechanical variables measurement; Raman scattering; Schottky barriers; Schottky diodes; Semiconductor diodes; Strain measurement; Tensile strain; Uniaxial strain;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246577
