DocumentCode :
2763410
Title :
Low cost, low CO2 emission solar grade silicon
Author :
Mott, John R. ; Bragagnolo, Julio A. ; Hayes, Michael P.
Author_Institution :
MB Sci. Corp., Walkersville, MD, USA
fYear :
2010
fDate :
20-25 June 2010
Abstract :
Grade Silicon (SGS) manufactured by upgrading Metallurgical Grade Silicon (MGSi) holds the promise of low manufacturing cost as necessary to achieve grid parity using crystalline silicon technology. In this paper, tje authors discuss the results of a Cost of Ownership (CoO) evaluation of a proprietary SGS manufacturing process, assigned by MB Scientific to One Solar Energy (OSE Process), a new venture in SGS manufacturing. The OSE Process, from quartz to SGS, is based on a new single-electrode arc furnace, used to produce high quality MGSi, coupled to a refining system to reduce B and P down to the required SGS levels. In particular, the authors compare the specific energy consumption (SEC) and CO2 emissions (COE) for various technologies used in manufacturing this Upgraded Metallurgical Silicon (UMG) SGS. The SEC differences between our SGS process and the current state-of-the-art, ultra high purity polysilicon process, are due to improved thermal efficiency and Si recovery of our arc furnace over conventional 3phase submerged arc silicon furnaces. The overall low cost and cleanliness of our "green" process is due to the superior SEC, high recovery of silicon, low emissions, and recycling of CO gas for power generation.
Keywords :
air pollution control; arc furnaces; carbon compounds; recycling; semiconductor industry; silicon; solar cells; OSE process; SGS manufacturing process; Si; carbon dioxide emission; crystalline silicon technology; grid parity; metallurgical grade silicon; one-solar-energy process; polysilicon process; recycling; silicon recovery; single-electrode arc furnace; solar grade silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5615923
Filename :
5615923
Link To Document :
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