Title :
A study of Ta2O5/rugged Si capacitor of 23 μC/μm2 applied to high-density DRAMs using sub-0.2 μm process
Author :
Ohji, Y. ; Iijima, S. ; Saito, A. ; Miki, H. ; Kanai, M. ; Kunitomo, M. ; Yamamoto, S. ; Furukawa, R. ; Sugawara, Y. ; Uemura, T. ; Kuroda, J. ; Nakata, M. ; Kisu, T. ; Kawagoe, T. ; Kawakita, K. ; Hasegawa, M. ; Nakamura, M. ; Kajigaya, K. ; Hidaka, M. ;
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
The Ta2O5/rugged Si capacitor was shown to be remarkably reliable for mass production of high-density DRAMs. Our investigation with large scale test capacitors and full-scale 64-Mbit and 256-Mbit DRAMs confirmed that it has low leakage current, low defect density, good retention characteristics, and superior TDDB lifetime for high-density DRAMs
Keywords :
DRAM chips; electric breakdown; electrolytic capacitors; elemental semiconductors; integrated circuit reliability; integrated circuit testing; leakage currents; silicon; tantalum compounds; 0.2 micron; 256 Mbit; 64 Mbit; DRAM process; DRAMs; TDDB lifetime; Ta2O5-Si; Ta2O5/rugged Si capacitor; defect density; full-scale DRAMs; high-density DRAMs; large scale test capacitors; leakage current; mass production; retention characteristics; Annealing; Capacitors; Electrodes; High K dielectric materials; Laboratories; Leakage current; Mass production; Random access memory; Silicon compounds; Tin;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5220-3
DOI :
10.1109/RELPHY.1999.761585
