Title :
Tradeoff between Short Channel Effect and Mobility in Strained-Si nMOSFETs
Author :
Yen Ping Wang ; San Lein Wu ; Shoou Jinn Chang
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
Abstract :
In this paper, we report the width dependence of short channel effect in strained-Si nMOSFETs. The trade-off between electron mobility enhancement and SCE control for various Ge contents and Si-cap layer thicknesses in the relaxed SiGe buffer are demonstrated. Finally, our work presents the optimum processes window for strained-Si device in advanced CMOS technology
Keywords :
CMOS integrated circuits; Ge-Si alloys; MIS devices; MOSFET; electron mobility; low-power electronics; CMOS technology; SiGe; electron mobility enhancement; relaxed SiGe buffer; short channel effect-mobility tradeoff; strained-Si device; strained-Si nMOSFET; width dependence; MOSFETs;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246596
