Title :
Study of oxide breakdown under very low electric field
Author :
Teramoto, A. ; Umeda, H. ; Azamawari, K. ; Kobayashi, K. ; Shiga, K. ; Komori, J. ; Ohno, Y. ; Miyoshi, H.
Author_Institution :
ULSI Dev. Center, Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
We have performed TDDB measurements at temperatures lower than 125°C in an electric field (Eox) range of 7-13.5 MV/cm and have evaluated the intrinsic lifetime in a wide electric field range, using both area and temperature dependences of oxide lifetime. For positive gate bias, log(tBD) of 7.1 and 9.6 nm oxides is not proportional to the electric field but is proportional to 1/Eox . This suggests that the breakdown mechanism of 9.6 nm oxide is the same as that of 7.1 nm oxide and adheres to the anode hole injection model. However, the breakdown mechanism of 4.0 nm oxide is not the same as that of 7.1 and 9.6 nm oxides. The slope of the log(tBD) versus 1/Eox plot in 4.0 nm oxide increases with a decrease in the oxide field. The intrinsic lifetime under positive gate bias decreases with increasing oxide thickness, while the lifetime under negative gate bias increases with increasing oxide thickness in the range of electric fields employed in this experiment
Keywords :
dielectric thin films; electric breakdown; electric fields; integrated circuit measurement; integrated circuit modelling; integrated circuit reliability; 125 C; 4 nm; 7.1 nm; 9.6 nm; SiO2-Si; TDDB measurement temperature; TDDB measurements; anode hole injection model; breakdown mechanism; electric field; electric field range; gate oxide; intrinsic lifetime; lifetime area dependence; lifetime temperature dependence; negative gate bias; oxide breakdown; oxide field; oxide thickness; positive gate bias; Anodes; Area measurement; Electric breakdown; Electric variables measurement; MOS capacitors; Performance evaluation; Temperature dependence; Temperature distribution; Temperature measurement; Testing;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5220-3
DOI :
10.1109/RELPHY.1999.761594