Title :
Growth and Structure Evaluation of Strain-Relaxed Ge1-xSnxBuffer Layers on Virtual Ge
Author :
Takeuchi, Shoji ; Sakai, Akihiko ; Yamamoto, Koji ; Nakatsuka, Osamu ; Ogawa, Michiko ; Zaima, Shigeaki
Author_Institution :
Dept. of Crystalline Mater. Sci., Nagoya Univ.
Abstract :
We have demonstrated the growth of strain-relaxed Ge1-xSnx buffer layers using virtual Ge(001) substrates. PDA effectively promoted the relaxation of the Ge1-x Snx layer, concomitantly with the lateral propagation of preexisting threading dislocations leaving misfit segments at the Ge 1-xSnx/Ge interface. Present results open up a scheme of fabricating strained channels which realize much high performance of MOSFET
Keywords :
buffer layers; dislocation structure; germanium; germanium compounds; molecular beam epitaxial growth; substrates; GeSn-Ge; MOSFET; buffer layers; strained channels; structure evaluation; threading dislocations; virtual substrates; Buffer layers; Capacitive sensors; Lattices; MOSFET circuits; Molecular beam epitaxial growth; Rapid thermal annealing; Substrates; Tensile strain; Tin; X-ray scattering;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246608
