Title :
Reexamination of fluorine incorporation into SiO2-significant improvement of charge-to-breakdown distribution tail
Author :
Mitani, Y. ; Satake, H. ; Nakasaki, Y. ; Toriumi, A.
Author_Institution :
Adv. Semicond. Devices Res. Labs., Toshiba Corp., Yokohama, Japan
Abstract :
We demonstrate for the first time that an appropriate fluorine (F) incorporation into SiO2 can drastically improve the Qbd distribution tail on the Weibull plot. From the experimental results, it is indicated that both the strain release and the restructuring of the SiO2 by F incorporation is responsible for Qbd improvement of weaker oxides. Furthermore, we propose that there are two critical defect densities for the dielectric breakdown, which are caused by intrinsic defects and extrinsic defects which induce accidental failure
Keywords :
Weibull distribution; dielectric thin films; doping profiles; electric breakdown; failure analysis; fluorine; integrated circuit reliability; integrated circuit testing; ion implantation; silicon compounds; stress relaxation; F incorporation; SiO2 fluorine incorporation; SiO2 restructuring; SiO2:F-Si; Weibull plot; accidental failure; charge-to-breakdown distribution tail; critical defect densities; dielectric breakdown; extrinsic defects; intrinsic defects; strain release; weak oxides; Capacitive sensors; Degradation; Design for quality; Dielectric breakdown; Hot carriers; MOSFETs; Probability distribution; Semiconductor devices; Stress; Ultra large scale integration;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5220-3
DOI :
10.1109/RELPHY.1999.761598
