DocumentCode
2764063
Title
Carbon Doping Effect on Strain Relaxation During Si1-x-yGexCy Epitaxial Growth on Si
Author
Nitta, H. ; Sakuraba, Masao ; Murota, Junichi
Author_Institution
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai
fYear
2006
fDate
15-17 May 2006
Firstpage
1
Lastpage
2
Abstract
Introduction of C into Si1-xGex heteroepitaxial growth on Si has attracted considerable attention for fabrication of novel heterostructure devices in Si-based technology for the band engineering by strain control in group IV semiconductors (Eberl et al, 1992, Chang et al, 1998). In the previous work, carbon effect on strain compensation in Si1-x-yGexCy films epitaxially grown on Si(100) at 500 degC has been investigated (Nitta et al, 2006). In the present work, difference of relaxation mechanism in the thick Si1-xGexCy (x=0.45) and Si1-x-yGexCy (x=0.45, y=0.016) films on Si(100) was investigated
Keywords
Ge-Si alloys; carbon compounds; epitaxial growth; semiconductor doping; stress relaxation; 500 C; SiGeC; band engineering; carbon doping effect; epitaxial growth; group IV semiconductors; heterostructure devices; relaxation mechanism; silicon-based technology; strain compensation; strain control; strain relaxation; Capacitive sensors; Doping; Epitaxial growth; Etching; Lattices; Raman scattering; Semiconductor films; Spectroscopy; X-ray lasers; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location
Princeton, NJ
Print_ISBN
1-4244-0461-4
Type
conf
DOI
10.1109/ISTDM.2006.246486
Filename
1715980
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