DocumentCode
2764570
Title
A Tensorial High-Field Electron Mobility Model for Strained Silicon
Author
Dhar, Sudipta ; Kosina, Hans ; Karlowatz, G. ; Ungersboeck, E. ; Grasser, Tibor ; Selberherr, Siegfried
Author_Institution
Inst. for Microelectron., TU Wien
fYear
2006
fDate
15-17 May 2006
Firstpage
1
Lastpage
2
Abstract
Application of stress to Si causes a deviation of its lattice constant from the equilibrium value, thereby modifying the electronic band structure. A phenomenological approach to calculate the mobility tensor for electrons in strained Si at high electric fields has been proposed. The model is intended for implementation in drift-diffusion based device simulators
Keywords
Monte Carlo methods; band structure; electron mobility; silicon; tensors; device simulators; drift-diffusion; electronic band structure; high electric fields; mobility tensor calculation; strained silicon; tensorial high-field electron mobility; Compressive stress; Electron mobility; Interpolation; Laboratories; Lattices; Mathematical model; Microelectronics; Monte Carlo methods; Silicon; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location
Princeton, NJ
Print_ISBN
1-4244-0461-4
Type
conf
DOI
10.1109/ISTDM.2006.246511
Filename
1716005
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