Title :
Effective Surface Treatments for Selective Epitaxial SiGe Growth in Locally Strained pMOSFETs
Author :
Liao, Chin-I ; Chen, Yi-Cheng ; Cheng, Po-Lun ; Wang, Hsiang-Ying ; Chien, Chin-Cheng ; Yang, Chan-Lon ; Huang, K.T. ; Tzou, S.F. ; Tang, Jinsong ; Kodali, Rohini ; Washington, Lori ; Chang, Vincent C. ; Fu, Tony ; Cho, Yonah
Author_Institution :
United Microelectron. Corp., Tainan
Abstract :
Cyclical wet clean in DI-O3/SC1/DHF and low temperature bake in HCl/H2 are presented as effective surface treatments for selective SiGe epitaxial deposition used to fabricate embedded SiGe pMOSFETs. The presented methods are most effective for device structures under limited chemical and thermal budgets
Keywords :
Ge-Si alloys; MOSFET; epitaxial growth; low-temperature techniques; surface treatment; SiGe; cyclical wet clean; locally strained pMOSFET; low temperature bake; selective epitaxial growth; surface treatments; Chemicals; Germanium silicon alloys; Hafnium; MOSFETs; Protection; Silicon germanium; Surface cleaning; Surface morphology; Surface treatment; Temperature;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246517
