SiGe/Si "Micro-Origami" Epitaxial MEMS Device on SOI Substrate

In the last decade, fabrication technology of microelectromechanical system (MEMS) was greatly developed and various devices have been demonstrated. Epitaxial MEMS structure is one of the variations of MEMS structure. The epitaxial MEMS has some advantages such as atomically flat surfaces and possibility of direct implementation of circuitry on the MEMS structure. In this work, we fabricated an epitaxial MEMS structure based on strain-induced bending of a SiGe/Si released layer. The present MEMS strucuture was named as "micro-origami". We released a SiGe/Si heteroepitaxial layer and a micromirror device was fabricated. The fabrication process and characteristics of the micro-origami device is described