• DocumentCode
    2765026
  • Title

    InGaP/GaAs/InGaAs inverted metamorphic (IMM) solar cells on 4″ epitaxial lifted off (ELO) wafers

  • Author

    Tatavarti, Rao ; Wibowo, A. ; Martin, G. ; Tuminello, F. ; Youtsey, C. ; Hillier, G. ; Pan, N. ; Wanlass, M.W. ; Romero, M.

  • Author_Institution
    MicroLink Devices Inc., Niles, IL, USA
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    InGaP/GaAs/InGaAs inverted metamorphic (IMM) triple junction (TJ) solar cells were fabricated on epitaxial liftoff (ELO) 100 mm diameter GaAs wafers. These ELO IMM solar cells exhibited an efficiency of 30% at one sun AM1.5D illumination, which is the highest reported efficiency for IMM ELO thin cells to date. The TJ ELO cells had fill factor (FF) >85%, open circuit voltage (Voc) of 2.78V, and short circuit current density (Jsc) of 12.64 mA/cm2. IMM ELO cells exhibited a peak efficiency of 36.3% at concentration of 264suns.
  • Keywords
    arsenic compounds; current density; epitaxial layers; gallium compounds; indium compounds; phosphorus compounds; solar cells; GaAs; InGaAs; InGaP; current density; epitaxial lifted off wafer; fill factor; inverted metamorphic solar cell; triple junction solar cell; voltage 2.78 V;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5616004
  • Filename
    5616004
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2765026