Title :
Lateral Quantum Dot in Si/SiGe Realized by a Schottky Split-Gate Technique
Author :
Berer, Thomas ; Pachinger, D. ; Pillwein, G. ; Muhlberger, M. ; Lichtenberger, H. ; Brunthaler, G. ; Schaffler, F.
Author_Institution :
Inst. fur Halbleiter und Festkorperphys., Johannes Kepler Univ., Linz
Abstract :
Our experiments demonstrate that Schottky-barrier reducing mechanisms can be overcome by adequately designed Si/SiGe heterostructures and that single electron transistor (SET) functionality can be achieved in modulation-doped Si/SiGe heterostructures with a standard split-gate approach that can easily be integrated into an array of coupled SETs
Keywords :
Ge-Si alloys; Schottky barriers; elemental semiconductors; semiconductor doping; semiconductor quantum dots; silicon; single electron transistors; Schottky split-gate technique; Schottky-barrier reducing mechanisms; Si-SiGe; lateral quantum dot; modulation doped heterostructures; single electron transistors; split-gate approach; Electrons; Epitaxial layers; Germanium silicon alloys; Quantum computing; Quantum dots; Schottky barriers; Silicon germanium; Split gate flash memory cells; US Department of Transportation; Voltage;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246538
