SiGe BiCMOS Technologies for Improving Sensitivity and High-Speed Characteristics of the Communication LSIs

Author

Miura, Masaki ; Shimamoto, Hiromi ; Hayami, R. ; Kodama, Akihiro ; Tominari, Tatsuya ; Hashimoto, Takashi ; Washio, K.

Author_Institution

Central Res. Lab., Hitachi, Ltd., Tokyo

fYear

0

fDate

0-0 0

Firstpage

1

Lastpage

2

Abstract

Two important technologies are exploited in the high-speed SiGe BiCMOS fabrications based on the inspection of the device physics. The effective reduction of the base resistance is achieved by optimizing profile and configuration of the SiGe HBT. Moreover, the concept of obtaining a narrow base in the BiCMOS process is established, which enables the ultra-high-speed SiGe BiCMOS

Keywords

BiCMOS integrated circuits; Ge-Si alloys; bipolar integrated circuits; high-speed integrated circuits; large scale integration; BiCMOS technologies; HBT devices; SiGe; base resistance; communication LSI; high-speed BiCMOS fabrication; high-speed characteristics; profile optimization; BiCMOS integrated circuits; CMOS process; CMOS technology; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Impurities; Large scale integration; Optimized production technology; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Conference_Location

Princeton, NJ

Print_ISBN

1-4244-0461-4

Type

conf

DOI

10.1109/ISTDM.2006.246542

Filename

1716036