DocumentCode
2765303
Title
Dynamics of Uniform Si/SiGe Uniaxial Strain Generation on Compliant Insulating Substrates
Author
Peterson, Rebecca L. ; Sturm, James C.
Author_Institution
Princeton Inst. for the Sci. & Technol. of Mater., Princeton Univ., NJ
fYear
2006
fDate
15-17 May 2006
Firstpage
1
Lastpage
2
Abstract
We have developed a model of the time dependence of asymmetric strain generation in Si/SiGe bilayers on compliant substrates, and established a process window for maximum strain asymmetry. The resulting uniaxial silicon strain of 0.75% tension is well-controlled and uniform across the SOI islands
Keywords
Ge-Si alloys; internal stresses; silicon-on-insulator; substrates; SOI islands; Si-SiGe; asymmetric strain generation; compliant insulating substrates; compliant substrates; time dependence; uniaxial silicon strain; uniform uniaxial strain generation; Annealing; Capacitive sensors; Compressive stress; Dielectrics and electrical insulation; Germanium silicon alloys; Numerical models; Silicon germanium; Substrates; Tensile stress; Uniaxial strain;
fLanguage
English
Publisher
ieee
Conference_Titel
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location
Princeton, NJ
Print_ISBN
1-4244-0461-4
Type
conf
DOI
10.1109/ISTDM.2006.246553
Filename
1716047
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