Title :
Thermal Stability of strained-SOI (sSOI)
Author :
Fukumoto, Ayako ; Sawano, Kentarou ; Hoshi, Yusuke ; Yoshimi, Masato ; Shiraki, Yasuhiro
Author_Institution :
Musashi Inst. of Technol., Tokyo
Abstract :
SiGe-free strained-Si-on-insulator (sSOI) is a promising structure for near-future CMOS circuits because it has benefits of both strained Si and SOI and it is free from problems relating to SiGe buffer layers. In this study, the strain state and thermal stability of sSOI substrates fabricated by the wafer bonding technique was investigated in detail by Raman spectroscopy and X-ray diffraction (XRD) reciprocal space mapping (RSM)
Keywords :
Raman spectroscopy; X-ray diffraction; internal stresses; silicon-on-insulator; thermal analysis; thermal stability; wafer bonding; Raman spectroscopy; X-ray diffraction; reciprocal space mapping; sSOI substrates; strain state; strained-SOI; strained-silicon-on-insulator; thermal stability; wafer bonding technique; Buffer layers; Capacitive sensors; Circuit stability; Germanium silicon alloys; Raman scattering; Silicon germanium; Spectroscopy; Thermal stability; Wafer bonding; X-ray diffraction;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246565
