Title :
A single lithography vertical NEMS switch
Author :
Rubin, J. ; Sundararaman, R. ; Kim, M.K. ; Tiwari, S.
Author_Institution :
Cornell Univ., Ithaca, NY, USA
Abstract :
We demonstrate the use of torsion in nanorelays to achieve low voltages, high speeds, single lithography step construction, and a form useful for configurability and electronic design enhancements in three-dimensional integrated implementations. The combined bending and torsion of self-aligned nanopillars facilitates the first top-down fabricated vertical three terminal nanoscale relay. Experimental devices, even at 500 nm features, operate at ~10 V and μs. Scaling suggests operation down to unit volts.
Keywords :
bending; nanoelectromechanical devices; nanolithography; relays; torsion; electronic design enhancement; nanopillar; nanorelay; single lithography vertical NEMS switch; size 500 nm; terminal nanoscale relay; three-dimensional integrated implementation; torsion; Logic gates; Metals; Nanoscale devices; Optical switches; Silicon; Voltage measurement;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
Conference_Location :
Cancun
Print_ISBN :
978-1-4244-9632-7
DOI :
10.1109/MEMSYS.2011.5734370