DocumentCode :
2766386
Title :
Photonic device integration using MOCVD grown quantum dots
Author :
Mokkapati, S. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Australian Nat. Univ., Canberra
fYear :
2006
fDate :
6-8 Dec. 2006
Firstpage :
53
Lastpage :
54
Abstract :
We present results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective-area MOCVD is used to tune the bandgap of epitaxial layers for device integration.
Keywords :
MOCVD; gallium arsenide; indium compounds; integrated optics; photonic band gap; quantum dot lasers; quantum well lasers; InGaAs; InGaAs quantum-dots; MOCVD grown quantum dots; epitaxial layers; photonic device integration; Epitaxial layers; Indium gallium arsenide; Laser tuning; MOCVD; Optical control; Photonic band gap; Quantum dot lasers; Quantum dots; Quantum well lasers; Waveguide lasers; photonic device integration; quantum-dots; selective-area epitaxy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4244-0578-7
Electronic_ISBN :
978-1-4244-0578-7
Type :
conf
DOI :
10.1109/COMMAD.2006.4429877
Filename :
4429877
Link To Document :
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