• DocumentCode
    27667
  • Title

    EMI susceptibility of DTMOS opamps

  • Author

    Richelli, Anna

  • Author_Institution
    Dept. of Inf. Eng., Univ. of Brescia, Brescia, Italy
  • Volume
    49
  • Issue
    2
  • fYear
    2013
  • fDate
    January 17 2013
  • Firstpage
    98
  • Lastpage
    99
  • Abstract
    The susceptibility to electromagnetic interference (EMI) of an amplifier based on dynamic threshold voltage MOS transistors (DTMOSs) has been analysed and improved thanks to an easy modification of the input differential stage. The final opamp has been designed in a 0.18 μm standard CMOS process.
  • Keywords
    CMOS analogue integrated circuits; MOSFET; electromagnetic interference; magnetic susceptibility; operational amplifiers; DTMOS opamps; EMI susceptibility; dynamic threshold voltage MOS transistors; electromagnetic interferences; final opamp; input differential stage; size 0.18 mum; standard CMOS process;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2012.3941
  • Filename
    6420074
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=27667