DocumentCode :
2767112
Title :
Characterization of defects in photovoltaics using thermoreflectance and electroluminescence imaging
Author :
Kendig, Dustin ; Alers, Glenn B. ; Shakouri, Ali
Author_Institution :
Univ. of California, Santa Cruz, CA, USA
fYear :
2010
fDate :
20-25 June 2010
Abstract :
Thermal and electroluminescence (EL) imaging techniques are widely accepted as powerful tools for analyzing solar cells. We have identified and characterized various defects in photovoltaic devices with sub-micron spatial resolution using a novel thermoreflectance imaging technique that can simultaneously obtain thermal and EL images with a mega-pixel silicon-based CCD. Linear and non-linear shunt defects are investigated as well as electroluminescent breakdown regions at reverse biases as low as -5V. Pre-breakdown sites with electroluminescence are observed. The wavelength flexibility of thermoreflectance imaging is explored and thermal images of sub-micrometer defects are obtained through glass that would typically be opaque for infrared light. Image sequences show a 10μs thermal transient response of a 15μm defect in a polysilicon solar cell. Nanosecond reverse bias voltage pulses are used to detect breakdown regions in thin-film a-Si solar cells with EL.
Keywords :
crystal defects; electroluminescence; flaw detection; image resolution; image sequences; infrared imaging; optical images; semiconductor device breakdown; semiconductor thin films; solar cells; thermoreflectance; EL image; electroluminescence imaging; electroluminescent breakdown; image sequence; linear shunt defect; megapixel silicon-based CCD; nonlinear shunt defect; photovoltaic device; polysilicon solar cell; reverse bias voltage pulse; submicrometer defect; submicron spatial resolution; thermal image; thermal transient response; thermoreflectance imaging; thin-film a-Si solar cell; wavelength flexibility; Thermoreflectance; defects; lock-in; shunts; solar cell; thermal imaging; thin-film;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5616126
Filename :
5616126
Link To Document :
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