Title :
Dark current modelling of midwave infrared HgCdTe gated photodiodes
Author :
Westerhout, R.J. ; Musca, C.A. ; Antoszewski, J. ; Dell, J.M. ; Faraone, L.
Author_Institution :
Univ. of Western Australia, Crawley
Abstract :
HgCdTe midwave-infrared gated photodiodes were studied both experimentally and theoretically to determine the dark current mechanisms present under different surface conditions. By modifying HgCdTe photodiode equations to account for surface band-bending we are able obtain a first-order approximation to the behaviour of these gated photodiodes. A good fit to the data has been obtained for band-to-band tunnelling and surface generation-recombination current, but not for trap-assisted-tunnelling (TAT) current. This is attributed to the exclusion of interface states in the model, the complicated TAT behaviour, as well as two-dimensional effects.
Keywords :
cadmium compounds; infrared spectra; mercury compounds; photodiodes; tunnelling; HgCdTe; band-to-band tunnelling; dark current modelling; first-order approximation; mercury cadmium telluride; midwave infrared gated photodiodes; surface band-bending; surface generation-recombination current; Dark current; Diodes; Equations; Immune system; Infrared spectra; Noise generators; Photodiodes; Plasma temperature; Surface fitting; Tunneling;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4244-0578-7
Electronic_ISBN :
978-1-4244-0578-7
DOI :
10.1109/COMMAD.2006.4429940
