Title :
IEE Colloquium on `Sub-Micron VLSI Reliability´ (Digest No.002)
Abstract :
The following topics were dealt with: gate current suppression in buried LDD MOSFETs; hot carrier-reliability in NMOS transistors; trap generation studied on MOSFET gate oxide; self-heating effects in SOI MOSFETs; structural analysis of packaged VLSI devices; and failure analysis of submicron VLSI memory devices
Keywords :
MOS integrated circuits; VLSI; circuit reliability; failure analysis; integrated circuit technology; integrated circuit testing; monolithic integrated circuits; MOSFET gate oxide; NMOS transistors; SAM; SOI MOSFETs; buried LDD MOSFETs; failure analysis; failure mechanisms; gate current suppression; hot carrier-reliability; lightly doped drain; monolithic IC; optimised drain structures; packaged VLSI devices; scanning acoustic microscopy; self-heating effects; structural analysis; submicron VLSI memory devices; submicron VLSI reliability; trap generation;
Conference_Titel :
Sub-Micron VLSI Reliability, IEE Colloquium on
Conference_Location :
London
