DocumentCode :
2768299
Title :
Stochastic strain sensor using pull-in probability under white-noise-applied bistable state with reliable pull-in release mechanism
Author :
Hatakeyama, Y. ; Esashi, M. ; Tanaka, S.
Author_Institution :
Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan
fYear :
2011
fDate :
23-27 Jan. 2011
Firstpage :
640
Lastpage :
643
Abstract :
This paper describes a MEMS based stochastic sensor, which will be used in low S/N environments like high temperature plants. The mass which vibrates between two counter electrodes by white noise voltage is “pulled-in” to either of the counter electrodes by applying pulse voltage to the mass. The direction of the pull-in is determined stochastically, and the probability that the mass is pulled in to a particular side depends on mechanical strain applied to the sensor. Therefore, strain can be measured just by counting the number of pull-in to a particular side, which is easy even in low S/N environments. We demonstrated this sensing principle using an SOI-based sensor, which had a reliable pull-in release mechanism using a non-linear spring structure. We also demonstrated that the pull-in probability could be tuned by bias voltage applied to the counter electrodes, as predicted by simulation.
Keywords :
electrodes; microsensors; silicon-on-insulator; strain sensors; white noise; MEMS; SOI based sensor; counter electrode; pull in probability; pull-in release mechanism; sensing principle; stochastic strain sensor; white noise applied bistable state; white noise voltage; Electrodes; Force; Radiation detectors; Springs; Strain; White noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
Conference_Location :
Cancun
ISSN :
1084-6999
Print_ISBN :
978-1-4244-9632-7
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2011.5734506
Filename :
5734506
Link To Document :
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