Reliability of dielectric barriers in copper damascene applications

Author

Lee, Albert S. ; Lakshmanan, Annamalai ; Rajagopalan, Nagarajan ; Cui, Zhenjiang ; Le, Maggie ; Xia, Li Qun ; Kim, Bok Heon ; M´saad, Hichem

Author_Institution

Dielectric Syst. & Modules Product Bus. Group, Appl. Mater. Inc., Santa Clara, CA, USA

fYear

2003

fDate

20-23 Oct. 2003

Firstpage

137

Lastpage

138

Abstract

The film properties of two PECVD deposited dielectric copper barrier films have been optimized to improve BEOL device reliability in terms of electromigration. Two critical aspects that affect electromigration are the dielectric barrier film hermeticity and adhesion to copper. We use a method to quantify the barrier film hermeticity of the BLO/spl kappa/ I low-/spl kappa/ dielectric film to be similar to that of silicon nitride. In addition, the interfaces between damascene nitride with copper, as well as BLO/spl kappa/ I with copper have been engineered to improve the interfacial adhesion energy to >10 J/m/sup 2/ for both damascene nitride and BLO/spl kappa/ I.

Keywords

copper; dielectric materials; electromigration; plasma CVD; reliability; BEOL device reliability; Cu; PECVD deposited dielectric copper barrier films; SiN; copper damascene; damascene nitride; dielectric barrier film hermeticity; dielectric barrier reliability; electromigration; film properties; interfacial adhesion energy; low-/spl kappa/ dielectric barrier film; silicon nitride; Adhesives; Compressive stress; Copper; Dielectric devices; Dielectric films; Dielectric thin films; Electromigration; Moisture; Silicon; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2003 IEEE International

Conference_Location

Lake Tahoe, CA, USA

Print_ISBN

0-7803-8157-2

Type

conf

DOI

10.1109/IRWS.2003.1283321

Filename

1283321