DocumentCode :
2768776
Title :
Magnetoresistive random access memory (MRAM) and reliability
Author :
Hughes, Brian
Author_Institution :
Infineon Technol. Corp., Germany
fYear :
2003
fDate :
20-23 Oct. 2003
Firstpage :
169
Lastpage :
174
Abstract :
This tutorial provides an overview of the design, operation and materials of magnetoresistive random access memory (MRAM) with emphasis from a reliability engineering perspective. The speaker provided background information on MRAM architectures and discussed novel reliability problems inherent to MRAM. Reliability issues and concerns were discussed and illustrated with examples wherever possible. The intention of the tutorial gave attendees a basic and broad introduction to the reliability challenges raised by this novel memory form.
Keywords :
magnetoresistive devices; memory architecture; random-access storage; reliability; MRAM architectures; MRAM reliability; magnetoresistive random access memory; reliability engineering; Antiferromagnetic materials; Coercive force; FETs; Hysteresis; Nonvolatile memory; Random access memory; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2003 IEEE International
Print_ISBN :
0-7803-8157-2
Type :
conf
DOI :
10.1109/IRWS.2003.1283331
Filename :
1283331
Link To Document :
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