Title :
Active self-Q-enhancement in high frequency thermally actuated M/NEMS resonators
Author :
Rahafrooz, Amir ; Pourkamali, Siavash
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Denver, Denver, CO, USA
Abstract :
This work demonstrates the self-Q enhancement capability of micro/nanomechanical thermal-piezoresistive resonators. Due to the existence of an internal feedback mechanism in one-port thermally actuated electromechanical resonators, such devices can compensate their mechanical energy loss by turning part of the electrical energy absorbed from their bias source into mechanical energy. This can lead to significantly improved resonator effective quality factors (Q). Over 1000X quality factor amplification and effective Q in the range of millions has been successfully demonstrated for high frequency thermally actuated single crystalline silicon resonators.
Keywords :
elemental semiconductors; microcavities; micromechanical resonators; nanoelectromechanical devices; silicon; 1000X quality factor amplification; active self-Q-enhancement; electrical energy; high frequency thermally actuated MEMS resonator; high frequency thermally actuated NEMS resonator; internal feedback mechanism; mechanical energy loss; micromechanical thermal-piezoresistive resonators; nanomechanical thermal-piezoresistive resonators; one-port thermally actuated electromechanical resonators; self-Q enhancement capability; single crystalline silicon resonators; Actuators; Current measurement; Frequency measurement; Piezoresistance; Q factor; Resonant frequency; Silicon;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
Conference_Location :
Cancun
Print_ISBN :
978-1-4244-9632-7
DOI :
10.1109/MEMSYS.2011.5734536